M464S6454EN0 Datasheet - Samsung semiconductor

M464S6454EN0 SDRAM Unbuffered SODIMM

Pin Name A0 ~ A12 BA0 ~ BA1 DQ0 ~ DQ63 CLK0 ~ CLK1 CKE0 ~ CKE1 CS0 ~ CS1 RAS CAS Select bank Data input/output Clock input Clock enable input Chip select input Row address strobe Column address strobe Function Address input (Multiplexed) WE DQM0 ~ 7 VDD VSS SDA SCL DU NC Pin Name Write enable DQM Po.

128MB, 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb E-die 64-bit Non ECC Revision 1.5 May 2004 Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.5 May 2004 128MB, 256MB, 512MB Unbuffered SODIMM Revision History Revision 1.1 (Sepember, 2003) - Corrected typo. Revision 1.2 (February, 2004) - Corrected typo. Revision 1.3 (March. 2004) - Corrected package dimension. Revision 1.4 (March.

M464S6454EN0 Features

* ircuit current Symbol VIN, VOUT VDD, VDDQ TSTG PD IOS Value -1.0 ~ 4.6 -1.0 ~ 4.6 -55 ~ +150 1.0

* # of component 50 SDRAM Unit V V °C W mA Note : Permanent device damage may occur if "ABSOLUTE MA

M464S6454EN0 Datasheet (268.98 KB)