* High speed up to 1066 MHz RDRAM storage
* 184 edge connector pads with 1mm pad spacing
* Module PCB size : 133.35mm x 31.75mm x 1.27mm Form Factor The RIMM modules are offered in 184-pad 1mm edge connector pad pitch suitable for 184 contact RIMM connectors. Figure 1 below,
MR18R1628GEG0 Datasheet (485.61 KB)
MR18R1628GEG0
Samsung semiconductor
485.61 KB
Key timing parameters.
MR16R1624(8/G)EG0 MR18R1624(8/G)EG0
Change History
Version 0.1 (December 2003) - Preliminary
* First copy.
* Based on the 1.0 ver. (July 2002).
📁 Related Datasheet
MR18R1628DF0 (MR1xR1622(4/8/G)DF0) Key Timing Parameters (Samsung semiconductor)
MR18R1628DF0 (MR1xR1622(4/8/G)DF0) Key Timing Parameters (Samsung semiconductor)
MR18R1622AF0 (MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die (Samsung semiconductor)
MR18R1622DF0 (MR1xR1622(4/8/G)DF0) Key Timing Parameters (Samsung semiconductor)
MR18R1622DF0 (MR1xR1622(4/8/G)DF0) Key Timing Parameters (Samsung semiconductor)
MR18R1624AF0 (MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die (Samsung semiconductor)
MR18R1624DF0 (MR1xR1622(4/8/G)DF0) Key Timing Parameters (Samsung semiconductor)
MR18R1624DF0 (MR1xR1622(4/8/G)DF0) Key Timing Parameters (Samsung semiconductor)
MR18R1624GEG0 Key Timing Parameters (Samsung semiconductor)
MR18R162GAF0 (MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die (Samsung semiconductor)
