MR18R1624AF0 Datasheet, A-die, Samsung semiconductor

✔ MR18R1624AF0 Features

256M x 16/18 -CN9 -CM8 -CK8
High speed up to 1066 MHz RDRAM storage
184 edge connector pads with 1mm pad spacing
Module PCB size : 133.35mm x 31.75mm x 1.27mm (5

✔ MR18R1624AF0 Application

including computer memory, personal computers, workstations and other applications where high bandwidth and

PDF File Details

Samsung semiconductor manufacturer logo

Part number:

MR18R1624AF0

Manufacturer:

Samsung semiconductor

File Size:

419.61 KB

Download:

📄 Datasheet

Description:

(mr1xr1622(4/8/g)af0) (16mx16)x2(4/8/16)pcs rimm module based on 256mb a-die. Signal Pins A1, A3, A5, A7, A9, A11, A13, A15, A17, A19, A21, A23, A25, A27, A29, A31, A33, A39, A52, A60, A62, A64, A66, A68, A70, A

📥 Download PDF (419.61 KB)

📁 Related Datasheet

MR18R1624DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters (Samsung semiconductor)

MR18R1624GEG0 - Key Timing Parameters (Samsung semiconductor)

MR18R1622AF0 - (MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die (Samsung semiconductor)

MR18R1622DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters (Samsung semiconductor)

MR18R1628DF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters (Samsung semiconductor)

TAGS

MR18R1624AF0 MR1xR16224 GAF0 16Mx16x24 16pcs RIMM Module based 256Mb A-die Samsung semiconductor