MR18R1624GEG0 Key Timing Parameters

Samsung semiconductor

Description

MR16R1624(8/G)EG0 MR18R1624(8/G)EG0 Change History Version 0.1 (December 2003) - Preliminary * First copy.* Based on the 1.0 ver.(July 2002).
Signal Pins A1, A3, A5, A7, A9, A11, A13, A15, A17, A19, A21, A23, A25, A27, A29, A31, A33, A39, A52, A60, A62, A64, A66, A68, A70, A72, A74, A76, A78.

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Datasheet Specifications

Part number: MR18R1624GEG0
Manufacturer: Samsung semiconductor
File Size: 485.61 KB
Datasheet: MR18R1624GEG0_Samsungsemiconductor.pdf
Description: Key Timing Parameters

Features

* High speed up to 1066 MHz RDRAM storage
* 184 edge connector pads with 1mm pad spacing
* Module PCB size : 133.35mm x 31.75mm x 1.27mm Form Factor The RIMM modules are offered in 184-pad 1mm edge connector pad pitch suitable for 184 contact RIMM connectors. Figure 1 below,

Applications

* including computer memory, personal computers, workstations and other applications where high bandwidth www. DataSheet4U. com and low latency are required. The RIMM module consists of 256/288Mb devices. These are extremely high-speed CMOS DRAMs organized as 16M words by 16 or 18 bits. The use of Rambu

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MR18R1624GEG0 Key Timing Parameters Samsung semiconductor

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