PC100 Datasheet - Samsung semiconductor

PC100 PC100 SDRAM MODULE Preliminary

The Samsung KMM366S1623CT is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung KMM366S1623CT consists of sixteen CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.1uF d.

PC100 Features

* d tCCD = 2CLKs tRC ≥ tRC(min) CKE ≤ 0.2V 3 2 920 760 mA 96 32 32 320 160 760 760 2,000 16 760 mA 720 mA mA 2 1 mA mA mA Active standby current in non power-down mode (One bank active) Operating current (Burst mode) Ref

PC100_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

PC100

Manufacturer:

Samsung semiconductor

File Size:

151.64 KB

Description:

Pc100 sdram module preliminary.

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PC100-222-620 3.3 V 16M x 64/72-Bit SDRAM Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 3.3 V 64M x 64/72-Bit SDRAM Modules (Siemens Semiconductor Group)

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PC100-323-620 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module (Siemens Semiconductor Group)

PC100-323-620 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module (Siemens Semiconductor Group)

PC100-323-620 3.3 V 16M x 64/72-Bit SDRAM Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 3.3 V 64M x 64/72-Bit SDRAM Modules (Siemens Semiconductor Group)

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PC100 PC100 PC100 SDRAM MODULE Preliminary Samsung semiconductor

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