SSS6N60
Samsung semiconductor
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(sss6n60 / sss6n55) n channel power mosfets.
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SSS6N55 - (SSS6N60 / SSS6N55) N CHANNEL POWER MOSFETS
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SSS6N70A - Advanced Power MOSFET
(Fairchild Semiconductor)
Advanced Power MOSFET
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SSS6N70A
BVDSS = 700 V RDS(on) = 1.8 Ω ID = 4 A
TO-220F
Avalanche Rugged.
SSS6N70A - Advanced Power MOSFET
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SSS6N80A - Advanced Power MOSFET
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SSS6N90A - Advanced Power MOSFET
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SSS6N90A - Advanced Power MOSFET
(Fairchild Semiconductor)
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.
SSS60N05 - (SSS60N05 / SSS60N06) N CHANNEL POWER MOSFETS
(Samsung semiconductor)
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SSS60N06 - (SSS60N05 / SSS60N06) N CHANNEL POWER MOSFETS
(Samsung semiconductor)
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SSS1004 - N-Channel enhancement mode power field effect transistors
(Silikron Semiconductor)
Main Product Characteristics
VDSS RDS(on)
100V 3.7mΩ (typ.)
ID 180A ①
Features and Benefits
TO-220
Advanced Process Technology Special desig.
SSS1004 - N-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
VDSS
100V
RDS(on) 3.4mΩ (typ.)
ID 180A ①
Features and Benefits
TO-220
Advanced Process Technology Special desi.
