SSS6N70A - Advanced Power MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	SSS6N70A
Manufacturer	Fairchild ↗ Semiconductor
File Size	286.04 KB
Description	Advanced Power MOSFET
Datasheet	SSS6N70A_FairchildSemiconductor.pdf

h S a t e e 4U . m o c SSS6N70A BVDSS = 700 V RDS(on) = 1.8 Ω ID = 4 A TO-220F Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 700V Low RDS(ON) : 1.552 Ω (Typ. ) 1 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Ο Continuous Drain Current (TC=100 C).

📁 SSS6N70A Similar Datasheet

SSS6N55 - (SSS6N60 / SSS6N55) N CHANNEL POWER MOSFETS (Samsung semiconductor)
SSS6N60 - (SSS6N60 / SSS6N55) N CHANNEL POWER MOSFETS (Samsung semiconductor)
SSS6N80A - Advanced Power MOSFET (Sansung Semiconductor)
SSS6N90A - Advanced Power MOSFET (Sansung Semiconductor)
SSS6N90C - N-Channel 900V Power MOSFET (VBsemi)
SSS60N05 - (SSS60N05 / SSS60N06) N CHANNEL POWER MOSFETS (Samsung semiconductor)
SSS60N06 - (SSS60N05 / SSS60N06) N CHANNEL POWER MOSFETS (Samsung semiconductor)
SSS1004 - N-Channel enhancement mode power field effect transistors (Silikron Semiconductor)

Other Datasheets by Fairchild Semiconductor

Published: Feb 9, 2006 |