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2N5089 - NPN EPITAXIAL SILICON TRANSISTOR

This page provides the datasheet information for the 2N5089, a member of the 2N5088 NPN EPITAXIAL SILICON TRANSISTOR family.

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Datasheet Details

Part number 2N5089
Manufacturer Samsung Semiconductor
File Size 57.00 KB
Description NPN EPITAXIAL SILICON TRANSISTOR
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Full PDF Text Transcription

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2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEO= 2N5088: 30V 2N5089: 25V • Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature :2N5088 2N5089 :2N5088 2N5089 VCBO VCEO VEBO IC PC TJ TSTG 30 30 25 4.5 50 625 150 -55 ~ 150 Unit V V V V mA m&&W TO-92 1.Emitter 2. Base 3.
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