2N5089 Datasheet - Samsung

2N5089 NPN EPITAXIAL SILICON TRANSISTOR

2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR Collector-Emitter Voltage: VCEO= 2N5088: 30V 2N5089: 25V Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature :2N5088 2N5089 :2N5088 2N5089 VCBO VCEO VEBO IC PC TJ TSTG 30 30 25 4.5 50 625 150 -55 ~ 150 U.

2N5089 Datasheet (57.00 KB)