Datasheet Details
Part number:
2N5089, 2N5088
Manufacturer:
Samsung
File Size:
57.00 KB
Description:
Npn epitaxial silicon transistor.
Note:
This datasheet PDF includes multiple part numbers: 2N5089, 2N5088.
Please refer to the document for exact specifications by model.
2N5089, 2N5088, NPN EPITAXIAL SILICON TRANSISTOR
2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR Collector-Emitter Voltage: VCEO= 2N5088: 30V 2N5089: 25V Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature :2N5088 2N5089 :2N5088 2N5089 VCBO VCEO VEBO IC PC TJ TSTG 30 30 25 4.5 50 625 150 -55 ~ 150 U
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