K4F170411D Datasheet (Samsung) - 4M x 4Bit CMOS Dynamic RAM

K4F170411D, 4M x 4Bit CMOS Dynamic RAM

This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs.

Fast Page Mode offers high speed random access of memory cells within the same row.

Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref.

or 4K Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package

K4F170411D Features

* of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx4 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low pow