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K4F170411D Datasheet - Samsung

K4F170411D 4M x 4Bit CMOS Dynamic RAM

This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package.

K4F170411D Features

* of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx4 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low pow

K4F170411D_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

K4F170411D

Manufacturer:

Samsung

File Size:

225.41 KB

Description:

4m x 4bit cmos dynamic ram.

K4F170411D Distributor

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K4F170411D K4F170411D 4Bit CMOS Dynamic RAM Samsung