Datasheet Details
Part number:
K4F170412D
Manufacturer:
Samsung
File Size:
225.41 KB
Description:
4M x 4Bit CMOS Dynamic RAM
Features
* of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx4 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low pow
K4F170412D_Samsungsemiconductor.pdf
K4F170412D, 4M x 4Bit CMOS Dynamic RAM
This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs.
Fast Page Mode offers high speed random access of memory cells within the same row.
Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref.
or 4K Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package
K4F170412D Distributor
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