K9GBG08U0A Datasheet (Samsung) - 32Gb A-die NAND Flash

K9GBG08U0A - 32Gb A-die NAND Flash

for VccQ and VssQ are added.

Voltage on any pin relative to VSS for VccQ=1.8V is added in table 2.1.

Temperature Under Bias(TBIAS) is deleted.

Table 2.3 DC AND OPERATING CHARACTERISTICS is modified.

(VccQ=1.8V added) 8.

Frequency condition of Capacitance is changed from 1.0Mhz to 100Mhz.

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2010 K9GBG08U0A K9LCG08U1A K9HDG08U5A 32Gb A-die NAND Flash Multi-Level-Cell (2bit/cell) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

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All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.

This document and all information discussed herein remain the sole and exclusive p

K9GBG08U0A Datasheet - Samsung

K9GBG08U0A - 32Gb A-die NAND Flash

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