K9GBG08U0A Datasheet - Samsung

K9GBG08U0A 32Gb A-die NAND Flash

for VccQ and VssQ are added. 5. Voltage on any pin relative to VSS for VccQ=1.8V is added in table 2.1. 6. Temperature Under Bias(TBIAS) is deleted. 7. Table 2.3 DC AND OPERATING CHARACTERISTICS is modified. (VccQ=1.8V added) 8. Frequency condition of Capacitance is changed from 1.0Mhz to 100Mhz. 9.

www.DataSheet4U.net Rev.1.0, May. 2010 K9GBG08U0A K9LCG08U1A K9HDG08U5A 32Gb A-die NAND Flash Multi-Level-Cell (2bit/cell) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive p.

K9GBG08U0A_Samsung.pdf