K9GBGD8U0M-B - FLASH MEMORY
Enterprise Advance FLASH MEMORY Offered in 4Gx8bit, the K9GBGD8X0M is a 32G-bit NAND Flash Memory with spare 2,076M-bit.
The device is offered in 3.3V Vcc & VccQ.
(3.3V & 1.8V) and also uses the toggle mode interface to achieve a high data transfer rate.
Its NAND cell provides the most cost-effec
K9GBGD8X0M K9LCGD8X1M K9PFGD8X7M K9HDGD8X5M K9PFGD8X5M Enterprise Advance FLASH MEMORY K9GBGD8X0M K9LCGD8X1M K9HDGD8X5M K9PFGD8X7M K9PFGD8X5M INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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K9GBGD8U0M-B Features
* Voltage Supply : - Core : 2.7V ~ 3.6V - I/O : 2.7V ~ 3.6V / 1.7V ~ 1.95V
* Organization - Memory Cell Array : (4G + 259.5M) x 8bit - Data Register : (8K + 512) x 8bit
* Automatic Program and Erase - Page Program : (8K + 512)Byte - Block Erase : (1M + 64K)Byte
* Page
