KMM366S403CTL Datasheet (Samsung)

KMM366S403CTL, PC66 SDRAM MODULE

The Samsung KMM366S403CTL is a 4M bit x 64 Synchronous Dynamic RAM high density memory module.

The Samsung KMM366S403CTL consists of sixteen CMOS 2M x 8 bit Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate.

Two 0.33uF decoupling ca

KMM366S403CTL Revision History Revision .3 (Mar.

1998) PC66 SDRAM MODULE Some Parameter values & Characteristics of comp.

level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA.

- Input leakage currents (I/O) : ±5uA to ±1.5uA.

- Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200mV.

- AC Operating Condition is changed as defined : VIH(max) = 5.6V AC.

The overshoot voltage duration is≤ 3ns.

VIL(min) = -2.0V AC.

The undershoot voltage duration

KMM366S403CTL Features

* put signals are changed one time during 30ns CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable IOL = 0 mA Page burst 2Banks activated tCCD = 2CLKs tRC ≥ tRC(min) CKE ≤ 0.2V 3 2 CAS Latency PC66 SDRAM