* put signals are changed one time during 30ns CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable IOL = 0 mA Page burst 2Banks activated tCCD = 2CLKs tRC ≥ tRC(min) CKE ≤ 0.2V 3 2 CAS Latency PC66 SDRAM
KMM366S403CTL Datasheet (162.23 KB)
KMM366S403CTL
Samsung
162.23 KB
Pc66 sdram module.
KMM366S403CTL
Revision History Revision .3 (Mar. 1998)
PC66 SDRAM MODULE
*Some Parameter values & Characteristics of comp. level are changed.
📁 Related Datasheet
KMM366S1623AT - 16M x 64 SDRAM DIMM
(Samsung)
.
KMM366S1623BT - PC100 SDRAM MODULE
(Samsung)
Be sure to visit ChipDocs site for more information http://.chipdocs.
Be sure to visit ChipDocs site for more information http://.chipdocs.c.
KMM366S1623BTL - PC66 SDRAM Module
(Samsung)
.
KMM366S1623CT - PC100 SDRAM MODULE Preliminary
(Samsung)
KMM366S1623CT
KMM366S1623CT SDRAM DIMM
Preliminary PC100 SDRAM MODULE
16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs wi.
KMM366S1623CTY - PC100 SDRAM Module
(Samsung)
KMM366S1623CTY
KMM366S1623CTY SDRAM DIMM
Preliminary PC100 SDRAM MODULE
16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs .
KMM366S1623DTL - PC66 Unbuffered DIMM
(Samsung)
KMM366S1623DTL
Revision History
Revision 0.0(July 7, 1999)
PC66 Unbuffered DIMM
• Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip I.
KMM366S163BT - PC100 SDRAM MODULE
(Samsung)
Be sure to visit ChipDocs site for more information http://.chipdocs.
Be sure to visit ChipDocs site for more information http://.chipdocs.c.
KMM366S823AT - SDRAM DIMM
(Samsung Semiconductor)
..
.
DataShee
.
. DataSheet 4 U .
..
et4U.
.
D.
