KSE180 Datasheet (Samsung) - NPN EPITAXIAL SILICON TRANSISTOR

KSE180, NPN EPITAXIAL SILICON TRANSISTOR

KSE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR DESIGNED FOR LOW POWER AUDIO AMPLIFIER AND LOW CURRENT HIGH SPEED SWITCHING APPLICATIONS TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage : KSE180 : KSE181 : KSE182 Collector-Emitter Voltage : KSE180 : KSE181 : KSE182 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissiapation (TA=25 ) Collector Dissipation ( TC=25 ) Junction Temperature Storage Temperature Symbol VCBO