K2943
Sanken ↗ Electric
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K2900-01 - N-channel MOS-FET
(Fuji Electric)
> Features
- High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated
2SK2900-01
FAP-IIIB Series
N-channel MO.
K2902-01MR - 2SK2902-01MR
(Fuji Electric)
2SK2902-01MR
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
.
K2915 - 2SK2915
(Toshiba Semiconductor)
2SK2915
..
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2915
Chopper Regulator, DC−DC Converter and Motor.
K2917 - 2SK2917
(Toshiba Semiconductor)
2SK2917
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2917
Chopper Regulator, DC−DC Converter and Motor Drive Applications
z.
K2919 - 2SK2919
(Sanyo)
Ordering number:ENN6121
N-Channel Silicon MOSFET
2SK2919
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed swit.
K2925 - Silicon N-Channel MOSFET
(Hitachi)
2SK2925(L),2SK2925(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS =0.060 Ω typ.
• High speed switching • 4V.
K2926 - 2SK2926
(Hitachi Semiconductor)
2SK2926(L), 2SK2926(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 0.042Ω typ.
• 4V gate drive device.
K2929 - 2SK2929
(Hitachi Semiconductor)
2SK2929
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-552C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS =0.026 Ω typ. •.
K2930 - 2SK2930
(Hitachi Semiconductor)
2SK2930
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-553C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS =0.020 Ω typ. •.
K2936 - 2SK2936
(Hitachi Semiconductor)
.DataSheet.co.kr
2SK2936
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-559B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance.
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