C5239
Sanken ↗ electric
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2sc5239.
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C5230 - 2SC5230
(Sanyo)
Ordering number:EN5046
NPN Epitaxial Planar Silicon Transistor
2SC5230
VHF to UHF Wide-Band Low-Noise Amplifier Applications
Features
· Low noise : .
C5231 - 2SC5231
(Sanyo)
Ordering number:EN5036B
NPN Epitaxial Planar Silicon Transistor
2SC5231
VHF to UHF Wide-Band Low-Noise Amplifier Applications
Features
· Low noise :.
C5232 - 2SC5232
(Toshiba)
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC5232
General Purpose Amplifier Applications Switching and Muting Switch Application
2S.
C5233 - 2SC5233
(Toshiba)
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC5233
General Purpose Amplifier Applications Switching and Muting Switch Application
2S.
C5237 - 2SC5237
(Hitachi)
2SC5237
Silicon NPN Epitaxial
Application
High frequency amplifier
Features
• Excellent high frequency characteristics fT = 400 MHz typ
• High voltag.
C5238 - 2SC5238
(Sanyo)
Ordering number:EN5126
NPN Triple Diffused Planar Silicon Transistor
2SC5238
Ultrahigh-Definition Color Display Horizontal Deflection Output Applicat.
C5200 - Silicon NPN Transistor
(Toshiba)
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5200
Power Amplifier Applications
2SC5200
Unit: mm
• High breakdown voltage: VCEO = 230 V (mi.
C5200N - NPN Transistor
(Toshiba)
Bipolar Transistors Silicon NPN Triple-Diffused Type
2SC5200N
1. Applications
• Power Amplifiers
2. Features
(1) High collector voltage: VCEO = 230 V .
C5201 - 2SC5201
(Toshiba)
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SC5201
High-Voltage Switching Applications
2SC5201
Unit: mm
• High breakdown voltage: VCEO.
C5206 - Silicon NPN Transistor
(Hitachi)
2SC5206
Silicon NPN Triple Diffused
Application
High power switching
Features
• High breakdown voltage VCBO = 500 V
• Isolated package TO-220FM
Outli.