C5271
Sanken ↗ electric
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C5270 - 2SC5270
(Panasonic Semiconductor)
Power Transistors
2SC5270, 2SC5270A
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
4.5
Unit: mm
q
q q
High brea.
C5275 - 2SC5275
(Sanyo)
Ordering number:EN5185
NPN Epitaxial Planar Silicon Transistor
2SC5275
UHF to S Band Low-Noise Amplifier, OSC Applications
Features
· Low noise : NF.
C5277 - 2SC5277
(Sanyo)
Ordering number:EN5187
NPN Epitaxial Planar Silicon Transistor
2SC5277
UHF to S Band Low-Noise Amplifier, OSC Applications
Features
· Low noise : NF.
C527UT170 - LED
(CREE)
Cree® UltraThin® Gen 3 LEDs
Data Sheet CxxxUT170-Sxxxx-31
Cree’s UltraThin® LEDs bine highly efficient InGaN materials with Cree’s proprietary G•Si.
C527UT190 - LED
(CREE)
Cree® UltraThin® UT190™ Gen 3 LEDs
CxxxUT190-Sxxxx-31 Data Sheet (50 µm chip thickness)
Cree’s UT190 LEDs bine highly efficient InGaN materials wit.
C5200 - Silicon NPN Transistor
(Toshiba)
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5200
Power Amplifier Applications
2SC5200
Unit: mm
• High breakdown voltage: VCEO = 230 V (mi.
C5200N - NPN Transistor
(Toshiba)
Bipolar Transistors Silicon NPN Triple-Diffused Type
2SC5200N
1. Applications
• Power Amplifiers
2. Features
(1) High collector voltage: VCEO = 230 V .
C5201 - 2SC5201
(Toshiba)
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SC5201
High-Voltage Switching Applications
2SC5201
Unit: mm
• High breakdown voltage: VCEO.
C5206 - Silicon NPN Transistor
(Hitachi)
2SC5206
Silicon NPN Triple Diffused
Application
High power switching
Features
• High breakdown voltage VCBO = 500 V
• Isolated package TO-220FM
Outli.
C5207A - Silicon NPN Transistor
(Hitachi Semiconductor)
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