* φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to base voltage 2SC5270 2SC5270A 2SC5270 2SC5270A Symbol VCBO VCES VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg 4.0 2.0±0.2 1.1±0.1 2.0 0.7±0.1 5.45±0.
C5270
Panasonic Semiconductor
86.90 KB
2sc5270.
Power Transistors
2SC5270, 2SC5270A
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
4.5
Unit: mm
q
q q
High brea.
📁 Related Datasheet
C5271 - 2SC5271
(Sanken electric)
2SC5271
Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5271 300 200 7 5(P.
C5275 - 2SC5275
(Sanyo)
Ordering number:EN5185
NPN Epitaxial Planar Silicon Transistor
2SC5275
UHF to S Band Low-Noise Amplifier, OSC Applications
Features
· Low noise : NF.
C5277 - 2SC5277
(Sanyo)
Ordering number:EN5187
NPN Epitaxial Planar Silicon Transistor
2SC5277
UHF to S Band Low-Noise Amplifier, OSC Applications
Features
· Low noise : NF.
C527UT170 - LED
(CREE)
Cree® UltraThin® Gen 3 LEDs
Data Sheet CxxxUT170-Sxxxx-31
Cree’s UltraThin® LEDs bine highly efficient InGaN materials with Cree’s proprietary G•Si.
C527UT190 - LED
(CREE)
Cree® UltraThin® UT190™ Gen 3 LEDs
CxxxUT190-Sxxxx-31 Data Sheet (50 µm chip thickness)
Cree’s UT190 LEDs bine highly efficient InGaN materials wit.
C5200 - Silicon NPN Transistor
(Toshiba)
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5200
Power Amplifier Applications
2SC5200
Unit: mm
• High breakdown voltage: VCEO = 230 V (mi.
C5200N - NPN Transistor
(Toshiba)
Bipolar Transistors Silicon NPN Triple-Diffused Type
2SC5200N
1. Applications
• Power Amplifiers
2. Features
(1) High collector voltage: VCEO = 230 V .
C5201 - 2SC5201
(Toshiba)
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SC5201
High-Voltage Switching Applications
2SC5201
Unit: mm
• High breakdown voltage: VCEO.
