C527UT170 Datasheet, Led, CREE

C527UT170 Features

  • Led
  • Small Chip
      – 170 x 170 x 50 μm
  • Single Wire Bond Structure
  • UT LED Performance
      – 450 nm
      – 12+ mW
     &n

PDF File Details

Part number:

C527UT170

Manufacturer:

CREE

File Size:

263.04kb

Download:

📄 Datasheet

Description:

Led. P-N Junction Area (μm) Chip Top Area (μm) Chip Thickness (μm) Chip Bottom Area (μm) Au Bond Pad Diameter (μm) Bonding Area Diameter (

Datasheet Preview: C527UT170 📥 Download PDF (263.04kb)
Page 2 of C527UT170 Page 3 of C527UT170

C527UT170 Application

  • Applications include consumer products, mobile devices and automotive applications where a small, thin form factor is required. FEATURES

TAGS

C527UT170
LED
CREE

📁 Related Datasheet

C527UT190 - LED (CREE)
Cree® UltraThin® UT190™ Gen 3 LEDs CxxxUT190-Sxxxx-31 Data Sheet (50 µm chip thickness) Cree’s UT190 LEDs bine highly efficient InGaN materials wit.

C5270 - 2SC5270 (Panasonic Semiconductor)
Power Transistors 2SC5270, 2SC5270A Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High brea.

C5271 - 2SC5271 (Sanken electric)
2SC5271 Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5271 300 200 7 5(P.

C5275 - 2SC5275 (Sanyo)
Ordering number:EN5185 NPN Epitaxial Planar Silicon Transistor 2SC5275 UHF to S Band Low-Noise Amplifier, OSC Applications Features · Low noise : NF.

C5277 - 2SC5277 (Sanyo)
Ordering number:EN5187 NPN Epitaxial Planar Silicon Transistor 2SC5277 UHF to S Band Low-Noise Amplifier, OSC Applications Features · Low noise : NF.

C5200 - Silicon NPN Transistor (Toshiba)
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi.

C5200N - NPN Transistor (Toshiba)
Bipolar Transistors Silicon NPN Triple-Diffused Type 2SC5200N 1. Applications • Power Amplifiers 2. Features (1) High collector voltage: VCEO = 230 V .

C5201 - 2SC5201 (Toshiba)
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5201 High-Voltage Switching Applications 2SC5201 Unit: mm • High breakdown voltage: VCEO.

C5206 - Silicon NPN Transistor (Hitachi)
2SC5206 Silicon NPN Triple Diffused Application High power switching Features • High breakdown voltage VCBO = 500 V • Isolated package TO-220FM Outli.

C5207A - Silicon NPN Transistor (Hitachi Semiconductor)
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its R.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts