* Small Chip
* 170 x 170 x 50 μm
* Single Wire Bond Structure
* UT LED Performance
* 450 nm
* 12+ mW
* 460 nm
* 10+ mW
* 470 nm
* 10+ mW
* 527 nm
* 4+ mW
* Low Forward Voltage
* 2.9 V Ty
C527UT170 Datasheet (263.04 KB)
C527UT170
CREE
263.04 KB
Led.
Cree® UltraThin® Gen 3 LEDs
Data Sheet CxxxUT170-Sxxxx-31
Cree’s UltraThin® LEDs combine highly efficient InGaN materials with Cree’s proprietary G
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CxxxUT190-Sxxxx-31 Data Sheet (50 µm chip thickness)
Cree’s UT190 LEDs bine highly efficient InGaN materials wit.
C5270 - 2SC5270
(Panasonic Semiconductor)
Power Transistors
2SC5270, 2SC5270A
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
4.5
Unit: mm
q
q q
High brea.
C5271 - 2SC5271
(Sanken electric)
2SC5271
Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5271 300 200 7 5(P.
C5275 - 2SC5275
(Sanyo)
Ordering number:EN5185
NPN Epitaxial Planar Silicon Transistor
2SC5275
UHF to S Band Low-Noise Amplifier, OSC Applications
Features
· Low noise : NF.
C5277 - 2SC5277
(Sanyo)
Ordering number:EN5187
NPN Epitaxial Planar Silicon Transistor
2SC5277
UHF to S Band Low-Noise Amplifier, OSC Applications
Features
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C5200 - Silicon NPN Transistor
(Toshiba)
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5200
Power Amplifier Applications
2SC5200
Unit: mm
• High breakdown voltage: VCEO = 230 V (mi.
C5200N - NPN Transistor
(Toshiba)
Bipolar Transistors Silicon NPN Triple-Diffused Type
2SC5200N
1. Applications
• Power Amplifiers
2. Features
(1) High collector voltage: VCEO = 230 V .
C5201 - 2SC5201
(Toshiba)
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SC5201
High-Voltage Switching Applications
2SC5201
Unit: mm
• High breakdown voltage: VCEO.
