C5277 Datasheet, 2sc5277, Sanyo

C5277 Features

• 2sc5277
• Low noise : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz).
• High gain : S21e2=10dB typ (f=1.5GHz).
• High cutoff frequency : fT=11GHz typ.
• Low-

PDF File Details

Part number:

C5277

Manufacturer:

Sanyo

File Size:

132.65kb

Download:

📄 Datasheet

Description:

2sc5277.

C5277 Application

• Applications Features
• Low noise : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz).
• High gain : S21e2=10dB typ (f=1.5GHz).

TAGS

C5277

Sanyo

📁 Related Datasheet

C5270 - 2SC5270 (Panasonic Semiconductor)
Power Transistors 2SC5270, 2SC5270A Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 4.5 Unit: mm q q q High brea.

C5271 - 2SC5271 (Sanken electric)
2SC5271 Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5271 300 200 7 5(P.

C5275 - 2SC5275 (Sanyo)
Ordering number:EN5185 NPN Epitaxial Planar Silicon Transistor 2SC5275 UHF to S Band Low-Noise Amplifier, OSC Applications Features · Low noise : NF.

C527UT170 - LED (CREE)
Cree® UltraThin® Gen 3 LEDs Data Sheet CxxxUT170-Sxxxx-31 Cree’s UltraThin® LEDs bine highly efficient InGaN materials with Cree’s proprietary G•Si.

C527UT190 - LED (CREE)
Cree® UltraThin® UT190™ Gen 3 LEDs CxxxUT190-Sxxxx-31 Data Sheet (50 µm chip thickness) Cree’s UT190 LEDs bine highly efficient InGaN materials wit.

C5200 - Silicon NPN Transistor (Toshiba)
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi.

C5200N - NPN Transistor (Toshiba)
Bipolar Transistors Silicon NPN Triple-Diffused Type 2SC5200N 1. Applications • Power Amplifiers 2. Features (1) High collector voltage: VCEO = 230 V .

C5201 - 2SC5201 (Toshiba)
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5201 High-Voltage Switching Applications 2SC5201 Unit: mm • High breakdown voltage: VCEO.

C5206 - Silicon NPN Transistor (Hitachi)
2SC5206 Silicon NPN Triple Diffused Application High power switching Features • High breakdown voltage VCBO = 500 V • Isolated package TO-220FM Outli.

C5207A - Silicon NPN Transistor (Hitachi Semiconductor)
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its R.