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LE25FV101T - 1M Serial Flash EEPROM

LE25FV101T Description

CMOS LSI m LE25FV101T o .c 4U 1M (128k words × 8bits) Serial Flash EEPROM t e e h S .
The LE25FV101T is a 128K x 8 CMOS sector erase, byte programmable serial Flash EEPROM.

LE25FV101T Features

* t EEPROM Technology CMOS Flash High Read/Write Reliability a Single 3.3-Volt Read and Write Operations Sector-write Endurance Cycles: 10 D . Sector Erase Capability: 256 Bytes per sector 10 Years Data Retention w Frequency: 10MHz Operating Self-timed Erase and Programming w Power Consumption Byte P

LE25FV101T Applications

* the LE25FV101T is offered with a guaranteed sector write endurance of 104 cycles. Data retention is rated greater than 10 years. m o SCK 4 5 c . SI The LE25FV101T is best suited for applications U that require re-programmable nonvolatile mass 4 t Figure1: Pin Assignment for 8-pin MSOP storage of pr

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Datasheet Details

Part number
LE25FV101T
Manufacturer
Sanyo Electric
File Size
100.68 KB
Datasheet
LE25FV101T_SanyoElectric.pdf
Description
1M Serial Flash EEPROM

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Sanyo Electric LE25FV101T-like datasheet