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LE25FV101T

1M Serial Flash EEPROM

LE25FV101T Features

* t EEPROM Technology CMOS Flash High Read/Write Reliability a Single 3.3-Volt Read and Write Operations Sector-write Endurance Cycles: 10 D . Sector Erase Capability: 256 Bytes per sector 10 Years Data Retention w Frequency: 10MHz Operating Self-timed Erase and Programming w Power Consumption Byte P

LE25FV101T General Description

The LE25FV101T is a 128K x 8 CMOS sector erase, byte programmable serial Flash EEPROM. The LE25FV101T is manufactured using SANYO's proprietary, high performance CMOS Flash EEPROM technology. Breakthroughs in EEPROM cell design and process architecture attain better reliability and manufacturabilit.

LE25FV101T Datasheet (100.68 KB)

Preview of LE25FV101T PDF

Datasheet Details

Part number:

LE25FV101T

Manufacturer:

Sanyo Electric

File Size:

100.68 KB

Description:

1m serial flash eeprom.

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LE25FV101T Serial Flash EEPROM Sanyo Electric

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