* Adoption of FBET, MBIT processes
* High breakdown voltage and large current capacity
* Fast switching speed
* Ultrasmall size making it easy to provide high-density small-sized hybrid ICs Specifications ( ) : 2SA1417 Absolute Maximum Ratings at Ta=25°C Parameter
2SA1417
Sanyo Semicon Device
260.18 KB
Pnp / npn epitaxial planar silicon transistor.
Ordering number : EN2006D
2SA1417 / 2SC3647
SANYO Semiconductors
DATA SHEET
2SA1417/2SC3647 PNP / NPN Epitaxial Planar Silicon Transistor
High-Volt.
📁 Related Datasheet
2SA1411 - Transistor
(ETC)
Free Datasheet http://../
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2SA1411 - Transistor
(Kexin)
SMD Type
Silicon PNP Epitaxia 2SA1411
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Features
Very high DC current gain:hFE=500 to 1600. High VEBO .
2SA1411 - Transistor
(TY Semiconductor)
SMD SMD Type Type
Transistors Transistors IC
Product specification
2SA1411
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
+0.1 2.4-0.1
High VEBO Volta.
2SA1412 - PNP SILICON TRIPLE DIFFUSED TRANSISTOR
(NEC)
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2SA1412-Z - PNP Transistor
(NEC)
.
2SA1412-Z - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·With TO-252(DPAK) packaging ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·F.
2SA1412-Z - Transistor
(Kexin)
SMD Type
PNP Silicon Transistor 2SA1412-Z
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
High Voltage: VCEO=-40.
2SA1412-Z - SILICON POWER TRANSISTOR
(Renesas)
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor.
