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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1400Z
DESCRIPTION ·High Collector-Emitter Voltage -
: VCEO= -400V(Min) ·Complement to Type 2SC3588Z ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high voltage switching ,especially in Hybrid integrated cricuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-400
V
VCEO
Collector-Emitter Voltage
-400
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-0.5
A
PC
Collector Power Dissipation @ TC=25℃
2.0
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website:www.iscsemi.