* High fT : fT typ=400MHz. High breakdown voltage : VCEO≥200V. Small reverce transfer capacitance and excellent high frequency characteristics : Cre=2.0pF(NPN), 2.5pF(PNP). Complementary PNP and NPN types. Adoption of FBET process. Specifications ( )
2SA1407
Sanyo Semicon Device
48.35 KB
Pnp / npn epitaxial planar silicon transistors.
Ordering number : EN1766D 2SA1407 / 2SC3601 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1407 / 2SC3601 Appli.
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