2SA1479 Datasheet - Sanyo Semicon Device

2SA1479 - PNP/NPN Epitaxial Planar Silicon Transistors

2SA1479 Features

* High breakdown voltage (VCEO≥300V).

* Excellent high frequency characteristic : Cre=1.8pF (typ).

* Adoption of MBIT process.

* No insulator required for mounting, which contrib- utes to reducing the cost and the number of manufacturing processes.

* Plastic-covered heat sink fac

Datasheet Details

2SA1479

Sanyo Semicon Device

155.03 KB

Pnp/npn epitaxial planar silicon transistors.

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