* Low collector-to-emitter saturation voltage : VCE(sat)=
* 0.5V (PNP), 0.4V (NPN) max.
* Large current capacity. Package Dimensions unit:mm 2010C [2SB919/2SD1235] ( ) : 2SB919 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Em
2SB919
Sanyo Semicon Device
115.22 KB
Pnp transistor.
Ordering number:1046B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB919/2SD1235
30V/8A High-Speed Switching Applications
Applications
* Large .
📁 Related Datasheet
2SB911M - PNP Transistor
(Rohm)
Transistors
Medium power Transistor(*32V,*2A)
2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M
FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (T.
2SB912 - PNP Transistor
(Sanyo Semicon Device)
Ordering number:1028B
PNP/NPN Epitaxial Planar Silicon Darlington Transistors
2SB912/2SD1229
Driver Applications
Applications
· Motor drivers, print.
2SB913 - PNP Transistor
(Sanyo Semicon Device)
Ordering number:1034B
PNP/NPN Epitaxial Planar Silicon Darlington Transistors
2SB913/2SD1230
Driver Applications
Applications
· Motor drivers, print.
2SB919 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB919
DESCRIPTION ·With TO-220C package ·Complemen.
2SB919 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·High Collector Current: IC= -8A ·Low Collector Saturation Voltage
: VCE(sat)= -0.5V(Max)@IC= -3A ·Compl.
2SB900 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB900
DESCRIPTION ·With TO-220C package ·Low colle.
2SB900 - Silicon PNP Power Transistor
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB900
DESCRIPTION ·Collector-Emitter BreakdownVoltage-
: V(BR)CEO= -50V(Min.) ·Low Collecto.
2SB901 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB901
DESCRIPTION ·Collector-Emitter BreakdownVoltage-
: V(BR)CEO= -60V(Min.) ·Low Collecto.
