2SC2910 - PNP/NPN Epitaxial Planar Silicon Transistors

Product Overview

Sanyo Semicon Device

Part number	2SC2910
Manufacturer	Sanyo Semicon Device
File Size	63.90 KB
Description	PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet	2SC2910 Datasheet
Additional preview pages of the 2SC2910 datasheet.

Adoption of FBET process.
High breakdown voltage.
Excellent linearity of hFE and small Cob.
Fast swtching speed. Package Dimensions unit:mm 2006B [2SA1208/2SC2910] 6.0 5.0 4.7 0.5 0.6 6.0 14.0 3.0 8.5 0.5 0.5 1 2 3 ( ) : 2SA1208 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage.

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Published: Mar 22, 2005 |