* High power gain : PG=15dB typ (f=0.4GHz).
* High cutoff frequency : fT=1.2GHz typ. Package Dimensions unit:mm 2018A [2SC3770] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current
2SC3770
Sanyo Semicon Device
72.82 KB
Npn epitaxial planar silicon transistor.
Ordering number:EN2095A NPN Epitaxial Planar Silicon Transistor 2SC3770 UHF, VHF Oscillator Mixer, HF Amplifier Applications Applications UHF/.
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