2SC3770 - NPN Epitaxial Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SC3770
Manufacturer	Sanyo Semicon Device
File Size	72.82 KB
Description	NPN Epitaxial Planar Silicon Transistor
Datasheet	2SC3770_SanyoSemiconDevice.pdf

High power gain : PG=15dB typ (f=0.4GHz).
High cutoff frequency : fT=1.2GHz typ. Package Dimensions unit:mm 2018A [2SC3770] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions.

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Published: Mar 22, 2005 |