* Small noise figure : NF=1.5dB typ (f=0.9GHz).
* High power gain : MAG=14dB typ (f=0.9GHz).
* High cutoff frequency : fT=5.0GHz typ. Package Dimensions unit:mm 2018A [2SC3775] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitt
2SC3775
Sanyo Semicon Device
122.97 KB
Npn epitaxial planar silicon transistor.
Ordering number:EN1948B NPN Epitaxial Planar Silicon Transistor 2SC3775 UHF Low-Noise Amplifier, Wide-Band Amplifier Applications Applications .
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