* Adoption of MBIT process.
* High DC current gain (hFE=800 to 3200).
* Large current capacity (IC=2A).
* Low collector-to-emitter saturation voltage (VCE(sat)≤0.3V).
* High VEBO (VEBO≥15V). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collec
2SC4390
Sanyo Semicon Device
69.44 KB
Npn epitaxial planar silicon transistor.
Ordering number : EN2958B
2SC4390
SANYO Semiconductors
DATA SHEET
2SC4390
NPN Epitaxial Planar Silicon Transistor
High hFE, AF Amplifier Applicatio.
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