Datasheet4U Logo Datasheet4U.com

2SC4423 - NPN Transistor

Datasheet Summary

Features

  • High breakdown voltage, high reliability.
  • Fast switching speed (tf : 0.1µs typ).
  • Wide ASO.
  • Adoption of MBIT process.
  • Micaless package facilitating easy mounting. Package Dimensions unit:mm 2039D [2SC4423] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 20.4 2.8 2.0 1.0 4.0 2.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (.

📥 Download Datasheet

Datasheet preview – 2SC4423

Datasheet Details

Part number 2SC4423
Manufacturer Sanyo Semicon Device
File Size 39.28 KB
Description NPN Transistor
Datasheet download datasheet 2SC4423 Datasheet
Additional preview pages of the 2SC4423 datasheet.

📁 Similar Datasheet

  • 2SC4423 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC4423 - NPN Transistor (INCHANGE)
  • 2SC4420 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SC4421 - Silicon NPN Power Transistor (INCHANGE)
  • 2SC4422 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SC4424 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC4424 - NPN Transistor (INCHANGE)
  • 2SC4425 - NPN Transistor (INCHANGE)
  • 2SC4426 - NPN Transistor (INCHANGE)
  • 2SC4427 - SILICON POWER TRANSISTOR (SavantIC)
Other Datasheets by Sanyo Semicon Device

Full PDF Text Transcription

Click to expand full text
Ordering number:ENN2854 NPN Triple Diffused Planar Silicon Transistor 2SC4423 400V/12A Switching Regulator Applications Features · High breakdown voltage, high reliability. · Fast switching speed (tf : 0.1µs typ). · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating easy mounting. Package Dimensions unit:mm 2039D [2SC4423] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 20.4 2.8 2.0 1.0 4.0 2.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25˚C PW≤300µs, duty cycle≤10% 5.45 5.
Published: |