* High fT : fT=400MHz (typ).
* High breakdown voltage : VCEO≥250V(min).
* High current.
* Small reverse transfer capacitance and excellent high-frequnecy characteristic : Cre=3.4pF (NPN), 4.2pF (PNP).
* Complementary pair with the 2SA1777/2SC4623.
* Adoption of FBET process.
2SC4623
Sanyo Semicon Device
125.57 KB
Pnp/npn epitaxial planar silicon transistors.
Ordering number:EN3644
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1777/2SC4623
Very High-Definition CRT Display Video Output Applications
Featu.
📁 Related Datasheet
2SC4620 - High-Voltage Switching Transistor
(Rohm)
Transistors
2SA1759 2SC4505 / 2SC4620
(96-97-A324)
(96-178-C300)
305
Appendix
Notes
No technical content pages of this document may be reproduce.
2SC4621 - Silicon NPN Transistor
(Panasonic)
Power Transistors
2SC4621
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
s Features
15.0±0.3 11..
2SC4622 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4622
DESCRIPTION ·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min) ·High.
2SC4624 - NPN TRANSISTOR
(Mitsubishi Electric Semiconductor)
.
2SC4626 - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistor
2SC4626
Silicon NPN epitaxial planer type
For high-frequency amplification Complementary to 2SA1790
1.6±0.15
Unit: mm
s Features
q q q
.
2SC4626G - Silicon NPN Transistor
(Panasonic)
Transistors
This product plies with the RoHS Directive (EU 2002/95/EC).
2SC4626G
Silicon NPN epitaxial planar type
For high-frequency amplifica.
2SC4626J - Silicon NPN Transistor
(Panasonic)
Transistors
2SC4626J
Silicon NPN epitaxial planar type
0.80±0.05
For high-frequency amplification
1.60+–00..0035 1.00±0.05
Unit: mm
0.12+–00..0013.
2SC4627 - NPN High-frequency Transistor
(GME)
Production specification
NPN High-frequency Transistor
FEATURES
Optimum for RF amplification of FM/AM radios.
Pb
Lead-free
High requency volta.
