* High speed.
* High breakdown voltage (VCBO=1600V).
* High reliability (Adoption of HVP process).
* Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC5506] 20.0 3.3 5.0 26.0 2.0 3.4 2.0 1.0 20.7 0.6 1.2 Specifications Absolute Maximum Ratings at Ta = 25˚C Parame
2SC5506
Sanyo Semicon Device
41.02 KB
Npn transistor.
Ordering number:EN6070 NPN Triple Diffused Planar Silicon Transistor 2SC5506 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicati.
📁 Related Datasheet
2SC5501 NPN TRANSISTOR (Sanyo Semicon Device)
2SC5501A RF Transistor (ON Semiconductor)
2SC5502 NPN TRANSISTOR (Sanyo Semicon Device)
2SC5503 NPN TRANSISTOR (Sanyo Semicon Device)
2SC5504 NPN TRANSISTOR (Sanyo Semicon Device)
2SC5505 Silicon NPN Transistor (Panasonic)
2SC5507 NPN TRANSISTOR (NEC)
2SC5508 NPN TRANSISTOR (NEC)
2SC5508 NPN SILICON RF TRANSISTOR (UTC)
2SC5508 NPN SILICON RF TRANSISTOR (Renesas)
