2SC5511
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Transistors.
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2SC5513 - NPN TRANSISTOR
(Panasonic Semiconductor)
Power Transistors
2SC5513
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
4.5
Unit: mm
q
q q
High breakdown volt.
2SC5514 - NPN TRANSISTOR
(Panasonic Semiconductor)
Power Transistors
2SC5514
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
4.5
Unit: mm
q
q q
High breakdown volt.
2SC5515 - NPN TRANSISTOR
(Panasonic Semiconductor)
Power Transistors
2SC5515
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
4.5
Unit: mm
q
q q
High breakdown volt.
2SC5516 - NPN TRANSISTOR
(Panasonic Semiconductor)
Power Transistors
2SC5516
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
4.5
Unit: mm
q
q q
High breakdown volt.
2SC5516 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5516
DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Low Saturation Voltage ·1.
2SC5517 - NPN Transistor
(Panasonic Semiconductor)
Power Transistors
2SC5517
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5 φ 3.2±0.1
Unit: mm
3.0±0.3 5˚
5˚
(4.5).
2SC5517 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
：VCBO= 1700V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·Built-in.
2SC5518 - NPN TRANSISTOR
(Panasonic Semiconductor)
Power Transistors
2SC5518
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
4.5
Unit: mm
q
q q
High breakdown volt.
2SC5519 - NPN TRANSISTOR
(Panasonic Semiconductor)
Power Transistors
2SC5519
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
4.5
Unit: mm
q
q q
High breakdown volt.
2SC5501 - NPN TRANSISTOR
(Sanyo Semicon Device)
Ordering number:ENN6221
NPN Epitaxial Planar Silicon Transistor
2SC5501
VHF to UHF Low-Noise Wide-Band Amplifier Applications
Features
· Low noise :.
