* φ3.2±0.1 5° 26.5±0.5 3.0±0.3 5° 23.4 22.0±0.5 2.0 1.2 5° 18.6±0.5 5° 5° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction
2SC5519
Panasonic Semiconductor
35.11 KB
Npn transistor.
Power Transistors
2SC5519
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
4.5
Unit: mm
q
q q
High breakdown volt.
📁 Related Datasheet
2SC5511 - Transistors
(Rohm)
2SC5511
Transistors
..
For Audio Amplifier output - TV Velosity Modulation (160V, 1.5A)
2SC5511
zExternal dimensions (Unit : mm)
TO.
2SC5513 - NPN TRANSISTOR
(Panasonic Semiconductor)
Power Transistors
2SC5513
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
4.5
Unit: mm
q
q q
High breakdown volt.
2SC5514 - NPN TRANSISTOR
(Panasonic Semiconductor)
Power Transistors
2SC5514
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
4.5
Unit: mm
q
q q
High breakdown volt.
2SC5515 - NPN TRANSISTOR
(Panasonic Semiconductor)
Power Transistors
2SC5515
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
4.5
Unit: mm
q
q q
High breakdown volt.
2SC5516 - NPN TRANSISTOR
(Panasonic Semiconductor)
Power Transistors
2SC5516
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
4.5
Unit: mm
q
q q
High breakdown volt.
2SC5516 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5516
DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Low Saturation Voltage ·1.
2SC5517 - NPN Transistor
(Panasonic Semiconductor)
Power Transistors
2SC5517
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5 φ 3.2±0.1
Unit: mm
3.0±0.3 5˚
5˚
(4.5).
2SC5517 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
：VCBO= 1700V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·Built-in.
