* High breakdown voltage, and high reliability through the use of a glass passivation layer
* High-speed switching
* Wide area of safe operation (ASO) 5˚ (4.0) 5˚ 2.0±0.2 5˚ / 1.1±0.1 0.7±0.1 I Absolute Maximum Ratings TC = 25°C 5.45±0.3 e ) Parameter Symbol Rati
2SC5517
Panasonic Semiconductor
200.68 KB
Npn transistor.
Power Transistors
2SC5517
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5 φ 3.2±0.1
Unit: mm
3.0±0.3 5˚
5˚
(4.5).
📁 Related Datasheet
2SC5511 - Transistors
(Rohm)
2SC5511
Transistors
..
For Audio Amplifier output - TV Velosity Modulation (160V, 1.5A)
2SC5511
zExternal dimensions (Unit : mm)
TO.
2SC5513 - NPN TRANSISTOR
(Panasonic Semiconductor)
Power Transistors
2SC5513
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
4.5
Unit: mm
q
q q
High breakdown volt.
2SC5514 - NPN TRANSISTOR
(Panasonic Semiconductor)
Power Transistors
2SC5514
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
4.5
Unit: mm
q
q q
High breakdown volt.
2SC5515 - NPN TRANSISTOR
(Panasonic Semiconductor)
Power Transistors
2SC5515
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
4.5
Unit: mm
q
q q
High breakdown volt.
2SC5516 - NPN TRANSISTOR
(Panasonic Semiconductor)
Power Transistors
2SC5516
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
4.5
Unit: mm
q
q q
High breakdown volt.
2SC5516 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5516
DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Low Saturation Voltage ·1.
2SC5517 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
：VCBO= 1700V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·Built-in.
2SC5518 - NPN TRANSISTOR
(Panasonic Semiconductor)
Power Transistors
2SC5518
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
4.5
Unit: mm
q
q q
High breakdown volt.
