Datasheet Specifications
- Part number
- 2SC5509
- Manufacturer
- Renesas ↗
- File Size
- 248.04 KB
- Datasheet
- 2SC5509_Renesas.pdf
- Description
- NPN SILICON RF TRANSISTOR
Description
Preliminary Data Sheet 2SC5509 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER .
Features
* Ideal for medium output power amplification NF = 1.2 dB TYP. , Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz Maximum available power gain: MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA, f = 2 GHz fT = 25 GHz technology adopted Flat-lead 4-pin thin-typ2SC5509 Distributors
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