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2SC5509 Datasheet - Renesas

2SC5509 NPN SILICON RF TRANSISTOR

Summary First edition issued Renesas format is applied to .

2SC5509 Features

* Ideal for medium output power amplification NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz Maximum available power gain: MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA, f = 2 GHz fT = 25 GHz technology adopted Flat-lead 4-pin thin-typ

2SC5509 Datasheet (248.04 KB)

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Datasheet Details

Part number:

2SC5509

Manufacturer:

Renesas ↗

File Size:

248.04 KB

Description:

Npn silicon rf transistor.

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2SC5509 NPN SILICON TRANSISTOR Renesas

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