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2SC5509 - NPN SILICON RF TRANSISTOR

Renesas

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Datasheet Details

Part number	2SC5509
Manufacturer	Renesas ↗
File Size	248.04 KB
Description	NPN SILICON RF TRANSISTOR
Datasheet	2SC5509_Renesas.pdf

2SC5509 Product details

Description

Summary First edition issued Renesas format is applied to

Features

Ideal for medium output power amplification NF = 1.2 dB TYP. , Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz Maximum available power gain: MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA, f = 2 GHz fT = 25 GHz technology adopted Flat-lead 4-pin thin-type super minimold (M04) package.

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Published: Nov 10, 2013 |