* Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. 0.4 0.5 0.6 0.4 1.8 15.0 3.0 0.4 1 2 1.3 3 1.3 1 : Emitter 2 : Collector 3 : Base SAN
2SC5607
Sanyo Semicon Device
30.77 KB
Npn transistor.
Ordering number : ENN6403A 2SC5607 NPN Epitaxial Planar Silicon Transistor 2SC5607 DC / DC Converter Applications Applications Package Di.
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