* Adoption of MBIT processes.
* Large current capacitance.
* Low collector-to-emitter saturation voltage.
* High-speed switching.
* High allowable power dissipation. 4.5 2.8 18.1 16.0 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 2.4 0.7 2.55 Specifications ( ) : 2SA2022 Absolute
2SC5610
Sanyo Semicon Device
51.79 KB
Npn transistor.
Ordering number:ENN6367 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2022/2SC5610 DC/DC Converter Applications Applications Relay drivers, .
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