2SC5964 - NPN Epitaxial Planar Silicon Transistors

Sanyo Semicon Device

Datasheet Details

Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications ( ) : 2SA2125 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB.

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Sanyo Semicon Device 2SC5964-similar datasheet

Published: Jul 25, 2006 |