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2SD2712 Datasheet - Sanyo Semicon Device

2SD2712 NPN Triple Diffused Planar Silicon Darlington Transistor

2SD2712 Features

* High DC current gain. Wide ASO. Low saturation voltage. Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage www.DataSheet4U.com Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions Ratings

2SD2712_SanyoSemiconDevice.pdf

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Datasheet Details

Part number:

2SD2712

Manufacturer:

Sanyo Semicon Device

File Size:

64.12 KB

Description:

Npn triple diffused planar silicon darlington transistor.

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TAGS

2SD2712 2SD2712 NPN Triple Diffused Planar Silicon Darlington Transistor Sanyo Semicon Device

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