* High DC current gain. Wide ASO. Low saturation voltage. Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage www.DataSheet4U.com Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions Ratings
2SD2712
Sanyo Semicon Device
64.12 KB
Npn triple diffused planar silicon darlington transistor.
Ordering number : ENN8402
2SD2712
2SD2712
Applications
*
NPN Triple Diffused Planar Silicon Darlington Transistor
Driver Applications
Sui.
📁 Related Datasheet
2SD2700 - Transistors
(Rohm)
Transistors
Low frequency amplifier
2SD2700
2SD2700
zApplication Low frequency amplifier Driver
zDimensions (Unit : mm)
0.2Max.
zFeatures 1) A co.
2SD2701 - Transistors
(Rohm)
2SD2701
Transistors
Low frequency amplifier
2SD2701
zApplication Low frequency amplifier Driver zExternal dimensions (Unit : mm)
(2)
0.3
2.0
0.85Max.
2SD2702 - Transistors
(Rohm)
2SD2702
Transistors
General purpose amplification (12V, 1.5A)
2SD2702
zApplication Low frequency amplifier zExternal dimensions (Unit : mm)
(2)
zFe.
2SD2703 - Transistors
(Rohm)
2SD2703
Transistors
General purpose amplification (30V, 1A)
2SD2703
zApplication Low frequency amplifier zExternal dimensions (Unit : mm)
(2)
0~0.1.
2SD2704K - Transistor
(ROHM)
For Muting (20V, 0.3A)
2SD2704K
Features 1) High DC current gain.
hFE = 820 to 2700 2) High emitter-base voltage.
VEBO = 25V (Min.) 3) Low Ron
Ron= .
2SD2705S - Transistors
(Rohm)
2SD2704K / 2SD2705S
Transistors
For Muting (20V, 0.3A)
2SD2704K / 2SD2705S
zFeatures 1) High DC current gain. hFE = 820 to 2700 2) High emitter-base .
2SD2707 - Transistor
(Rohm)
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S
Transistors
General Purpose Transistor (50V, 0.15A)
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD222.
2SD2720 - NPN Epitaxial Planar Silicon Transistors
(Sanyo Semicon Device)
..
Ordering number : ENA0437A
2SB1739 / 2SD2720
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors
2.
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