2SK3666 - N-Channel Junction Silicon FET

Sanyo Semicon Device

Datasheet Details

Part number	2SK3666
Manufacturer	Sanyo Semicon Device
File Size	64.96 KB
Description	N-Channel Junction Silicon FET
Datasheet	2SK3666_SanyoSemiconDevice.pdf

Small IGSS. Small Ciss Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Conditions Ratings 30 --30 10 10 200 150 --55 to +150 Unit V V mA mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Cutoff Voltage Drain Current.

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Published: Nov 28, 2008 |