Datasheet Specifications
- Part number
- 2SK3667
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 255.59 KB
- Datasheet
- 2SK3667_ToshibaSemiconductor.pdf
- Description
- N-Channel MOSFET
Description
2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3667 Switching Regulator Applications * * * <.
Applications
* Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ. ) High forward transfer admittance: |Yfs| = 5.5S (typ. ) Low leakage current: IDSS = 100μA (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Charac2SK3667 Distributors
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