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2SK3667 Datasheet - Toshiba Semiconductor

2SK3667 N-Channel MOSFET

2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3667 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 5.5S (typ.) Low leakage current: IDSS = 100μA (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source volta.

2SK3667_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SK3667

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

255.59 KB

Description:

N-channel mosfet.

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2SK3667 2SK3667 N-Channel MOSFET Toshiba Semiconductor

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