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2SK360 Datasheet - Hitachi Semiconductor

2SK360 N-Channel MOSFET

2SK360 Silicon N-Channel MOS FET Application VHF amplifier Outline MPAK 3 1 2 1. Gate 2. Drain 3. Source 2SK360 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Note: 1. VGS = 4 V Symbol VDSX VGSS ID IG Pch Tch Tstg 1 Ratings 20 ±5 30 ±1 150 150 55 to +150 Unit V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to so.

2SK360_HitachiSemiconductor.pdf

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Datasheet Details

Part number:

2SK360

Manufacturer:

Hitachi Semiconductor

File Size:

24.50 KB

Description:

N-channel mosfet.

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