2SK3603-01MR Datasheet, Transistor, Inchange Semiconductor

2SK3603-01MR Features

• Transistor
• Drain Current : ID= 23A@ TC=25℃
• Drain Source Voltage : VDSS= 150V(Min)
• Static Drain-Source On-Resistance : RDS(on) = 105mΩ(Max) @ VGS= 10V
• 100% avala

PDF File Details

Part number:

2SK3603-01MR

Manufacturer:

Inchange Semiconductor

File Size:

280.10kb

Download:

📄 Datasheet

Description:

N-channel mosfet transistor.

motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE

2SK3603-01MR Application

• Applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipmen

TAGS

2SK3603-01MR

Inchange Semiconductor

📁 Related Datasheet

2SK3603-01MR - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
2SK3603-01MR FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Aval.

2SK360 - N-Channel MOSFET (Hitachi Semiconductor)
2SK360 Silicon N-Channel MOS FET Application VHF amplifier Outline MPAK 3 1 2 1. Gate 2. Drain 3. Source 2SK360 Absolute Maximum Ratings (Ta = 25.

2SK3600-01L - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
.. 2SK3600-01L,S,SJ FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breado.

2SK3600-01S - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
.. 2SK3600-01L,S,SJ FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breado.

2SK3600-01SJ - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
.. 2SK3600-01L,S,SJ FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breado.

2SK3600L - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor 2SK3600L FEATURES ·Drain Current : ID= 29A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-R.

2SK3600S - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor 2SK3600S FEATURES ·Drain Current : ID= 29A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-R.

2SK3601-01 - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
.. 2SK3601-01 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low drivin.

2SK3602-01 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor 2SK3602-01 FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On.

2SK3602-01 - N-CHANNEL SILICON POWER MOSFET (Fuji Electric)
2SK3602-01 FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalan.