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2SK366 Datasheet - Toshiba Semiconductor

2SK366 N-Channel MOSFET

TOSHIBA Effect Transistor Silicon N Channel Junction Type 2SK366 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications 2SK366 Unit: mm High voltage: VGDS = 40 V High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) Low RDS (ON): RDS (ON) = 50 Ω (typ.) (IDSS = 5 mA) Small package Complementary to 2SJ107 Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipatio.

2SK366_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SK366

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

172.46 KB

Description:

N-channel mosfet.

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2SK366 2SK366 N-Channel MOSFET Toshiba Semiconductor

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