2SK536 - N-Channel MOSFET

Sanyo Semicon Device

Datasheet Details

Large yfs.
Enhancement type.
Low ON-state resistance. Package Dimensions unit:mm 2024B [2SK536] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current Drain Current(Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGS ID IDP PD Tch Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Dra.

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Published: Mar 30, 2005 |