* High breakdown voltage.
* Large current capacity.
* Adoption of MBIT process. 1.6 0.8 0.8 0.6 3.0 1.5 3.0 7.0 11.0 15.5 0.5 ( ) : 2SA1249 2.4 4.8 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base
C3117
Sanyo Semicon Device
70.24 KB
2sc3117.
www.DataSheet4U.com Ordering number:ENN1060C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1249/2SC3117 160V/1.5A Switching Applications Uses .
📁 Related Datasheet
C3112 2SC3112 (Toshiba Semiconductor)
C3113 2SC3113 (Toshiba Semiconductor)
C3114 2SC3114 (Sanyo Semicon Device)
C3116 2SC3116 (Sanyo)
C311C UPC311C (NEC)
C3101 2SC3101 (Mitsubishi Electronics)
C3102 2SC3102 (Mitsubishi Electric Semiconductor)
C3120 2SC3120 (Toshiba Semiconductor)
C3121 2SC3121 (Toshiba)
C3122 2SC3122 (Toshiba)
