C3642 - 2SC3642

Sanyo Semicon Device

Datasheet Details

High reliability (Adoption of HVP process).
Fast speed.
High breakdown voltage.
Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3642] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C Electrical Characterist.

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Published: Feb 9, 2015 |