* Fast speed (tf typ=100ns).
* High breakdown voltage (VCBO=1500V).
* High reliability (adoption of HVP process).
* Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage
C3685
Sanyo Semicon Device
15.53 KB
2sc3685.
Ordering number:EN1937A
NPN Triple Diffused Planar Silicon Transistor
2SC3685
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicat.
📁 Related Datasheet
C3680 - 2SC3680
(Sanken electric)
2SC3680
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC.
C3686 - 2SC3686
(Sanyo Semicon Device)
..
..
..
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C3688 - 2SC3688
(Sanyo Semicon Device)
Ordering number:EN1940B
NPN Triple Diffused Planar Silicon Transistor
2SC3688
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicat.
C3689 - 2SC3689
(Sanyo)
Ordering number : EN1855B
2SC3689
SANYO Semiconductors
DATA SHEET
2SC3689
NPN Epitaxial Planar Silicon Transistor
High-hFE, Low-Frequency General-.
C3600 - 2SC3600
(Sanyo)
Ordering number:ENN1765B
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1406/2SC3600
Ultrahigh-Definition CRT Display Video Output Applications
App.
C3605 - 2SC3605
(Toshiba Semiconductor)
Free Datasheet http://../
Free Datasheet http://../
Free Datasheet http://../
Free Datasheet htt.
C3606 - 2SC3606
(Toshiba)
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3606
2SC3606
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
· Low noise figure, hi.
C3607 - 2SC3607
(Toshiba)
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3607
2SC3607
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
· Low noise figure, hi.
